Infineon SPW47N60C3FKSA1 CoolMOS Power Transistor: Datasheet, Specifications, and Application Notes

The Infineon SPW47N60C3FKSA1 represents a pinnacle of high-voltage power MOSFET technology, engineered for high-efficiency and high-power-density applications. As part of Infineon's renowned CoolMOS C3 series, this transistor is built on a superjunction (SJ) concept, which drastically reduces on-state resistance (RDS(on)) and switching losses compared to conventional MOSFETs. It is specifically designed to meet the rigorous demands of modern switch-mode power supplies (SMPS), industrial power systems, and renewable energy inverters.

A deep dive into its datasheet reveals the key parameters that define its performance. The component is rated for a drain-source voltage (VDS) of 650 V, making it robust enough to handle high-voltage bus lines and transient spikes. It boasts a continuous drain current (ID) of 47 A at 25°C, coupled with an exceptionally low RDS(on) of just 0.038 Ω (max) at VGS = 10 V. This low resistance is the cornerstone of its high-efficiency operation, as it minimizes conduction losses. Furthermore, the device features an integrated fast body diode, which enhances its reliability in hard-switching and inductive load applications. The TO-247 package ensures superior thermal performance, allowing for effective heat dissipation and higher power throughput.

The specifications highlight several advantages of the C3 technology. A crucial feature is the reduced gate charge (Qg) and improved figure-of-merit (FOM = RDS(on) × Qg), which directly translates to faster switching speeds and lower driving losses. This enables systems to operate at higher frequencies, leading to smaller magnetic components and overall more compact designs. The transistor also exhibits excellent avalanche ruggedness and 100% automated avalanche testing, guaranteeing high reliability under extreme operating conditions.

Application notes for the SPW47N60C3FKSA1 emphasize its optimal use in power factor correction (PFC) stages and LLC resonant converters, which are prevalent in server PSUs, telecom rectifiers, and high-end audio amplifiers. When designing the gate drive circuit, it is recommended to use a gate driver IC with a peak output current of at least 2A to swiftly charge and discharge the input capacitance, minimizing switching transition times. Careful PCB layout is paramount; minimizing parasitic inductance in the high-current loop is essential to suppress voltage overshoot and ensure stable operation. For thermal management, attaching the device to a heatsink with a low thermal resistance is necessary to maintain the junction temperature within safe limits, thereby maximizing longevity and performance.

ICGOOODFIND: The Infineon SPW47N60C3FKSA1 is a superior 650V CoolMOS transistor that sets a high benchmark for efficiency and power density. Its optimal blend of low RDS(on), fast switching capability, and proven ruggedness makes it an ideal cornerstone for advanced, high-efficiency power conversion systems across industrial and consumer domains.

Keywords: CoolMOS C3, Superjunction MOSFET, Low RDS(on), High-Efficiency SMPS, Avalanche Ruggedness.