Infineon 200N15N: A High-Performance N-Channel Power MOSFET for Demanding Applications

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon 200N15N stands as a premier solution, engineered to meet the rigorous demands of modern high-power applications. This N-channel power MOSFET, built on Infineon's advanced proprietary technology, sets a high benchmark for performance in switching power supplies, motor control systems, and industrial drives.

A key highlight of the 200N15N is its exceptionally low on-state resistance (RDS(on)) of just 20 mΩ typical. This minimal resistance directly translates to reduced conduction losses, allowing the device to handle high continuous drain currents (ID) up to 200A with superior efficiency. This characteristic is crucial for applications where energy savings and thermal management are critical, as it minimizes power dissipation and the need for extensive cooling systems.

The device is rated for a drain-to-source voltage (VDS) of 150V, making it exceptionally suited for high-power 48V DC systems commonly found in telecommunications infrastructure, server power supplies, and automotive applications. The robust voltage rating ensures reliable operation and provides a necessary safety margin against voltage spikes, enhancing system longevity.

Furthermore, the 200N15N boasts outstanding switching performance. Its low gate charge (Qg) and optimized internal capacitance enable fast switching speeds. This reduces switching losses significantly, which is a vital advantage in high-frequency circuits such as switch-mode power supplies (SMPS) and DC-DC converters. The result is a system that can operate at higher frequencies with greater efficiency, leading to more compact and power-dense designs.

Thermal management is seamlessly integrated into the device's design. The low thermal resistance coupled with a high maximum power dissipation rating ensures that heat is effectively transferred away from the silicon die. This inherent ruggedness allows designers to push performance boundaries without compromising reliability, even in harsh operating environments.

ICGOOODFIND: The Infineon 200N15N is a top-tier power MOSFET that excels in delivering high current, low losses, and robust thermal performance. It is an optimal choice for engineers designing high-efficiency, high-power systems where reliability and performance cannot be compromised.

Keywords: Power MOSFET, Low RDS(on), High Current, Switching Performance, Thermal Management.