Infineon IPD050N10N5: A 100 V OptiMOS 5 Power Transistor for High-Efficiency Automotive Applications

The relentless drive towards vehicle electrification demands power semiconductors that deliver uncompromising efficiency, reliability, and power density. Addressing these core requirements, Infineon Technologies introduces the IPD050N10N5, a 100 V N-channel power MOSFET from the esteemed OptiMOS™ 5 family, engineered specifically for the rigorous demands of the automotive industry.

This transistor is designed as a benchmark for high-performance switching in a compact package. With an ultra-low maximum on-state resistance (RDS(on)) of just 5.0 mΩ, the device minimizes conduction losses, a critical factor for improving overall system efficiency. This characteristic is paramount in applications like electric power steering (EPS), braking systems, and DC-DC converters within 48 V mild-hybrid architectures, where every percentage point of efficiency translates into extended range and reduced energy dissipation.

Beyond its impressive RDS(on), the IPD050N10N5 excels in its dynamic performance. The OptiMOS™ 5 technology ensures exceptionally low switching losses, allowing for higher operating frequencies. This enables designers to shrink the size of associated passive components like inductors and capacitors, leading to more compact, lighter, and ultimately more cost-effective electronic control units (ECUs). The component's qualification for automotive AEC-Q101 standards guarantees its robustness and longevity under the harsh conditions of an automotive environment, including extreme temperature fluctuations and high vibrational stress.

Housed in a robust and space-efficient SuperSO8 package (PG-TDSON-8), it offers an excellent power-to-footprint ratio, which is essential for the increasingly crowded under-the-hood applications. The package also features improved thermal performance, ensuring that heat is effectively dissipated away from the silicon, maintaining performance and reliability even under high load conditions.

In summary, the Infineon IPD050N10N5 stands as a superior solution for designers aiming to push the boundaries of efficiency and power density in next-generation automotive systems.

ICGOOODFIND: The Infineon IPD050N10N5 is a high-efficiency, AEC-Q101 qualified 100 V MOSFET that sets a new standard for low RDS(on) and switching losses, making it an ideal choice for demanding 48 V automotive power systems like EPS and DC-DC converters.

Keywords: Automotive MOSFET, OptiMOS™ 5, Low RDS(on), High-Efficiency, AEC-Q101.