High-Performance Isolated Gate Driver Solutions with the Infineon 1EDI2001AS

The relentless pursuit of higher efficiency, power density, and reliability in modern power electronics, from industrial motor drives to renewable energy systems, hinges on a critical component: the gate driver. Isolated gate drivers, in particular, serve as the indispensable link between low-voltage control circuits and high-voltage power switches like IGBTs and SiC MOSFETs. At the forefront of this technology is Infineon's 1EDI2001AS, a single-channel IGBT and MOSFET gate driver that sets a new benchmark for performance and integration.

This compact driver is built upon Infineon's robust coreless transformer (CT) technology, which provides the fundamental isolation barrier. This technology is superior to traditional optocoupler-based solutions, offering exceptional immunity against common-mode transients (CMTI) exceeding 150 kV/µs. This high CMTI is absolutely critical in high-speed switching applications using SiC MOSFETs, where rapid voltage swings (dv/dt) could otherwise cause malfunction and potential switch failure.

The 1EDI2001AS is engineered for high-performance switching. It delivers peak output currents of up to ±10 A, enabling very fast turn-on and turn-off of power semiconductors. This minimizes switching losses, a key factor for achieving high system efficiency. The driver's integrated features significantly enhance system robustness. These include advanced Active Miller Clamping, which prevents unwanted turn-on of the power switch caused by Miller current during fast switching events, and under-voltage lockout (UVLO) protection for both the primary and secondary sides, ensuring the power switch only operates within its safe gate voltage range.

Furthermore, the device offers a configurable DESAT (desaturation) protection function. This feature provides short-circuit protection for the connected IGBT or SiC MOSFET by detecting overcurrent conditions and triggering a soft shutdown, thereby safeguarding the entire power stage. The combination of these protective features makes the 1EDI2001AS a cornerstone for building highly reliable and fault-resilient power systems.

Designed for ease of use, the driver requires very few external components and supports an operational isolation voltage of 1.5 kV. Its wide supply voltage range and AEC-Q100 qualification also make it an excellent choice not only for industrial applications but also for the demanding environments of automotive traction inverters and onboard chargers.

ICGOO

The Infineon 1EDI2001AS represents a significant leap in isolated gate driver technology. By integrating coreless transformer isolation, robust protection features like Active Miller Clamping, and support for high switching speeds with strong drive current, it provides a complete, reliable, and high-performance solution that simplifies design and accelerates the development of next-generation power conversion systems.

Keywords:

1. Isolated Gate Driver

2. Coreless Transformer (CT) Technology

3. Common-Mode Transient Immunity (CMTI)

4. Active Miller Clamping

5. SiC MOSFET